- Part Status :
- Input Type :
- Voltage - Supply :
- Channel Type :
- Driven Configuration :
- Logic Voltage - VIL, VIH :
- Rise / Fall Time (Typ) :
19 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,122
有现货
|
Infineon Technologies | IC DRIVER CURR SENSE 1CH 8-DIP | - | Obsolete | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 12 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | |||
|
获得报价 |
3,172
有现货
|
Infineon Technologies | IC DRIVER CURR SENSE 1CH 8-DIP | - | Obsolete | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 9 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | |||
|
1,261
有现货
|
Infineon Technologies | IC DRIVER MOSFET/IGBT 1CH 8-DIP | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600V | 75ns, 35ns | ||||
|
3,860
有现货
|
Infineon Technologies | IC DRIVER HALF-BRIDGE 600V 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.7V, 2.3V | 290mA, 600mA | 600V | 70ns, 35ns | ||||
|
1,846
有现货
|
Infineon Technologies | IC DRIVER HALF-BRIDGE 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 70ns, 35ns | ||||
|
3,602
有现货
|
Infineon Technologies | IC DRIVER HALF-BRIDGE 600V 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 100ns, 35ns | ||||
|
1,486
有现货
|
Infineon Technologies | IC DVR CURR SENSE 1CH 600V 8DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 9 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | ||||
|
2,872
有现货
|
Infineon Technologies | IC DVR HALF BRIDGE 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 100ns, 35ns | ||||
|
1,929
有现货
|
Infineon Technologies | IC DVR HALF BRIDGE 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 100ns, 35ns | ||||
|
3,972
有现货
|
Infineon Technologies | IC DRIVER MOSFET/IGBT 1CH 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600V | 75ns, 35ns | ||||
|
3,399
有现货
|
Infineon Technologies | IC DRIVER HALF-BRIDGE 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200V | 70ns, 35ns | ||||
|
1,764
有现货
|
Infineon Technologies | IC DVR CURR SENSE 1CH 600V 8DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 12 V ~ 20 V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | ||||
|
2,429
有现货
|
Infineon Technologies | IC DRIVER HALF-BRIDGE 8-DIP | - | Active | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200V | 70ns, 35ns | ||||
|
3,898
有现货
|
Infineon Technologies | IC DRIVER HALF-BRIDGE 8-DIP | - | Active | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 70ns, 35ns | ||||
|
3,631
有现货
|
Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 100ns, 35ns | ||||
|
1,197
有现货
|
Infineon Technologies | IC DRIVER HI/LO SIDE 600V 8-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 70ns, 35ns | ||||
|
2,216
有现货
|
Infineon Technologies | IC DRIVER HI/LO SIDE 200V 8-DIP | - | Not For New Designs | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200V | 70ns, 35ns | ||||
|
923
有现货
|
Infineon Technologies | IC DRIVER HALF-BRIDGE 8-DIP | - | Active | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 100ns, 35ns | ||||
|
3,601
有现货
|
Infineon Technologies | IC DRIVER HALF-BRIDGE 8-DIP | - | Active | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 290mA, 600mA | 600V | 75ns, 35ns |